05275851 is referenced by 305 patents and cites 2 patents.

A fabrication process polycrystalline silicon thin film transistors commences with the deposition of an ultra-thin nucleating-site forming layer onto the surface of an insulating substrate (e.g., 7059 glass). Next, an amorphous silicon film is deposited thereover and the combined films are annealed at temperatures that do not exceed 600.degree. C. By patterning the deposition of the nucleating site forming material on the glass substrate, the subsequently deposited amorphous film can be selectively crystallized only in areas in contact with the nucleating-site forming material.

Title
Low temperature crystallization and patterning of amorphous silicon films on electrically insulating substrates
Application Number
8/25710
Publication Number
5275851
Application Date
March 3, 1993
Publication Date
January 4, 1994
Inventor
Gang Liu
Sunnyvale
CA, US
Stephen J Fonash
State College
PA, US
Agent
Thomas J Monahan
Assignee
The Penn State Research Foundation
PA, US
IPC
B05D 3/06
H01L 21/324
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