05571571 is referenced by 32 patents and cites 19 patents.

A method of forming conformal, high quality silicon oxide films that can be deposited over closely spaced, submicron lines and spaces without the formation of voids, comprises forming a plasma of TEOS and a selected halogen-containing gas in certain ratios. By proper control of the energy sources that create the plasma, the proper selection of the halogen-containing gas and selection of other processing parameters, high deposition rates can also be achieved.

Title
Method of forming a thin film for a semiconductor device
Application Number
184331
Publication Number
5571571
Application Date
June 14, 1994
Publication Date
November 5, 1996
Inventor
Shinzuke Mizuno
Narita
JP
Katsuyuki Musaka
Sakae
JP
Agent
Michael B Einschlag
Birgit E Morris
Assignee
Applied Materials
CA, US
IPC
C23C 16/00
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