Method of forming a thin film for a semiconductor device United States Patent 05571571

05571571 is referenced by 32 patents and cites 19 patents.

Katsuyuki Musaka

A method of forming conformal, high quality silicon oxide films that can be deposited over closely spaced, submicron lines and spaces without the formation of voids, comprises forming a plasma of TEOS and a selected halogen-containing gas in certain ratios. By proper control of the energy sources that create the plasma, the proper selection of the halogen-containing gas and selection of other processing parameters, high deposition rates can also be achieved.

Title
Method of forming a thin film for a semiconductor device
Application Number
184331
Publication Number
5571571
Application Date
June 14, 1994
Publication Date
November 5, 1996
Inventor
Shinzuke Mizuno
Narita
JP
Katsuyuki Musaka
Sakae
JP
Agent
Michael B Einschlag
Birgit E Morris
Assignee
Applied Materials
CA, US
IPC
C23C 16/00
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Citations: 32 (view full list)

  1. Paul Kevin Shufflebotham, Brian McMillin, Alex Demos, Huong Nguyen, Butch Berney, Monique Ben Dor: Inductively coupled plasma CVD. Lam Research Corporation, Burns Doane Swecker & Mathis L, February 6, 2001: US06184158 (79 worldwide citation)
  2. Kam S Law, Robert M Robertson, Quanyuan Shang, Jeff Olsen, Carl Sorensen: Dual frequency excitation of plasma for film deposition. Applied Komatsu Technology, Fish & Richardson, February 15, 2000: US06024044 (78 worldwide citation)
  3. Choon Kun Ryu, Judy H Huang, David Cheung: Method and apparatus for depositing a planarized passivation layer. Applied Materials, Townsend & Townsend & Crew, June 1, 1999: US05908672 (74 worldwide citation)
  4. Masato Terasaki, Kazunori Tsutsuguchi: Method of plasma processing a substrate placed on a substrate table. Kokusai Electric, Birch Stewart Kolasch & Birch, February 27, 2001: US06194037 (61 worldwide citation)
  5. Kent Rossman, Turgut Sahin, Hichem M Saad, Romuald Nowak: Reduction of mobile ion and metal contamination in HDP-CVD chambers using chamber seasoning film depositions. Applied Materials, Townsend & Townsend & Crew, September 19, 2000: US06121161 (41 worldwide citation)
  6. Anand Gupta, Mohan Bhan, Sudhakar Subrahmanyam: Film to tie up loose fluorine in the chamber after a clean process. Applied Materials, Townsend & Townsend & Crew, February 1, 2000: US06020035 (26 worldwide citation)
  7. Mohan Krishan Bhan, Sudhakar Subrahmanyam, Anand Gupta, Virendra V S Rana: Method for improving film stability of fluorosilicate glass films. Applied Materials, Townsend and Townsend and Crew, October 27, 1998: US05827785 (25 worldwide citation)
  8. Shunpei Yamazaki, Sachiaki Teduka, Satoshi Toriumi, Makoto Furuno, Yasuhiro Jinbo, Koji Dairiki, Hideaki Kuwabara: Manufacturing method of semiconductor device. Semiconductor Energy Laboratory, Eric J Robinson, Robinson Intellectual Property Law Office P C, November 16, 2010: US07833845 (25 worldwide citation)
  9. Dean R Denison, Mark Weise: Process for depositing a SiOx film having reduced intrinsic stress and/or reduced hydrogen content. LAM Research Corporation, Burns Doane Swecker & Mathis, December 4, 2001: US06326064 (22 worldwide citation)
  10. Dean R Denison, James Lam: Method for depositing fluorine doped silicon dioxide films. Lam Research Corporation, Burns Doane Swecker & Mathis L, March 28, 2000: US06042901 (18 worldwide citation)

References: 19 (view full list)

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